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Λεπτομέρειες:
Πληρωμής & Αποστολής Όροι:
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| Λειτουργία: | Βήμα-up, βήμα-κάτω | Διαμόρφωση εξόδου: | Θετικό ή αρνητικό |
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| Τοπολογία: | Buck, Boost | Τύπος εξόδου: | Ευκανόνιστος |
| Αριθμός εξόδων: | 1 | ||
| Επισημαίνω: | N-Channel Power MOSFET 55A 60V,TO-220FP MOSFET low gate charge,Logic Level MOSFET high speed switching |
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STP55NF06FP 55A 60V N-Channel Power MOSFET with andlt;0.02andOmega; RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control
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Features
1:Low On-Resistance (Low RDS(on)): Extremely low maximum on-resistance of 0.02andOmega; (at Vgs=10V), reducing conduction losses, improving efficiency, and minimizing heat generation.
2:High Current Handling: Capable of handling up to 55A continuous drain current, with even higher pulse current capability, making it suitable for high-power applications.
3:Logic-Level Gate Drive: Low threshold voltage (Vgs(th) typically 2V to 4V), allowing it to be directly driven by 5V or 3.3V microcontrollers (e.g., Arduino, STM32) without requiring level-shifting circuits.
4:Fast Switching Speed: Optimized for high-frequency switching applications, such as SMPS and PWM motor control, reducing switching losses.
5:Fully Insulated Package (TO-220FP FullPak): The TO-220FP encapsulation fully encloses the metal heatsink, providing enhanced insulationandnbsp;and safety while simplifying assembly by eliminating the need for additional insulation pads.
6:High Voltage Rating: Drain-source voltage (Vds) rating of 60V, offering sufficient margin for 12V, 24V, and higher voltage systems.
7:Rugged Design: Avalanche rated, ensuring durability under energy surges from inductive load switching (e.g., motors, relays).
8:Low Gate Charge (Qg): Low total gate charge reduces driving requirements and enables efficient high-speed switching.
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Applications
■ Switching application
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Description
These Power MOSFETs have been developed using STMicroelectronicsandrsquo; unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
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INFORMATION
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Category
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Mfr
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Series
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Packaging
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Tube
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Part Status
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Active
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FET Type
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Technology
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Drain to Source Voltage (Vdss)
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60 V
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Current - Continuous Drain (Id) @ 25anddeg;C
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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18mOhm @ 27.5A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250andmicro;A
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Gate Charge (Qg) (Max) @ Vgs
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60 nC @ 10 V
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Vgs (Max)
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andplusmn;20V
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Input Capacitance (Ciss) (Max) @ Vds
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1300 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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30W (Tc)
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Operating Temperature
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-55anddeg;C ~ 175anddeg;C (TJ)
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Grade
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-
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Qualification
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-
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Mounting Type
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Through Hole
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Supplier Device Package
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TO-220FP
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Package / Case
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Base Product Number
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Drawing
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